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Dept. Of Electrical Engineering National Central University | 論文
- A New Combination of RSD and Inside Spacer Thin Film Transistor
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- AC Power Loss and Signal Coupling in VLSI backend Interconnects
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications