スポンサーリンク
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan | 論文
- Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
- Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
- Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
- Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate
- Wavefront Control System for Phase Compensation in Hard X-ray Optics
- Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid
- Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
- Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure
- Morphological Stability of Si(001) Surface Immersed in Fluid Mixture of Ultrapure Water and Silica Powder Particles in Elastic Emission Machining
- Structural Characterization of Polycrystalline 3C–SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
- SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
- Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate
- Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer