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Department of Materials Science and Engineering, Kwangju Institute of Science and Technology | 論文
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
- The Effect of Ar/O_2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System : Atoms, Molecules, and Chemical Physics
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- Improved Reliability Characteristics of Ultrathin SiO_2 Grown by Low Temperature Ozone Oxidation
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- Extracting the Oxide Capacitance Using Inductance -Capacitance-Resistance Meter Measurement on Metal-Oxide-Semiconductor Capacitors : Semiconductors
- Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D_2O
- Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D_2O
- Electrical Characteristics of Ozone-Oxidized HfO_2 Gate Dielectrics
- Ultrashallow p^+/n Junction Formation by 0.5-1 keV Ion Implantation
- A Study on the role of Minilaparotomically Assisted Vaginal Hysterectomy(Others 2)