スポンサーリンク
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology | 論文
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Syntheses and Characterization of the Alternating Polymers Based on Cyclopenta[def]phenanthrene Backbone with Spiro Group
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- Improved Reliability Characteristics of Ultrathin SiO_2 Grown by Low Temperature Ozone Oxidation
- Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Thermal stability of metal electrodes and its impact on gate dielectric characteristics
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors