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Department of Electronics Engineering, Chungnam National University | 論文
- An Area-Efficient and Fully Synthesizable Bluetooth Baseband Module for Wireless Communication(Integrated Electronics)
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- New Hardware Architecture for Multiplication over GF(2^m) and Comparisons with Normal and Polynomial Basis Multipliers for Elliptic Curve Cryptography
- Is there a role for magnetic resonance imaging in renal trauma?
- Two cases of perineal ectopic testis
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure
- Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
- Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure
- Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Flight Tests of the KO-1 Aircraft at Night
- Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
- Transfer Alignment Error Compensator Design Based on Robust State Estimation
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory