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Department of Electronic and Electrical Engineering, Pohang University of Science and Technology | 論文
- Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors Using Titanium Disilicide Contacts for Source and Drain
- Three-Level Charge-Pumping Technique for Grain-Boundary Trap Evaluation in Polysilicon Thin Film Transistors
- Identification of Grain-Boundary Trap Properties Using Three-Level Charge-Pumping Technique in Polysilicon Thin-Film Transistors
- Spatially-Controllable Quantum Well Intermixing with Stripe-Size Dependence in AlGaAs Heterostructures
- A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
- Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
- Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
- PMOS Thin-Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
- Fabrication of hyperboloid drum structures for photonic quantum ring nano-lasers using chemically assisted ion beam etching
- Fabrication of hyperboloid drum structures for photonic quantum ring nano-lasers using chemically assisted ion beam etching
- Enhanced Current-Voltage Characteristics of Al_Ga_As/In_Ga_As/GaAs P-HEMTs Using an Inverted Double Channel Structure
- AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition
- Global Asymptotic Stability of FAST TCP Network with Heterogeneous Feedback Delays
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface