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Department of Electronic Engineering, National Chiao Tung University | 論文
- Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Analysis of an Adaptive P-Persistent MAC Scheme for WLAN Providing Delay Fairness
- A Unified 3-D Mobility Model for the Simulation of Submicron MOS Devices
- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's
- Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque
- Deuterium Effect on Stress-Induced Leakage Current
- A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's
- New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors : Semiconductors
- New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
- Analysis of Structure-Dependent Hot Carrier Effect in Various LDD MOSFET's Using an Efficient Interface State Profiling Method
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement