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Department of Electrical and Electronic Engineering, Meijo University | 論文
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
- Microstructures of GaInN/GaInN Superlattices on GaN Substrates
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
- Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
- Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
- Fundamentals of the Nitride Based Laser Diode
- Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)