スポンサーリンク
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
- Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures
- Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
- Semipolar (20\bar{2}1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage