Al₂O₃ Growth on (100) In_0.53Ga_0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

スポンサーリンク

概要

• 論文の詳細を見る

• The influence of hydrogen plasma treatment before atomic layer deposition of aluminum oxide on In_0.53Ga_0.47As is investigated. Experiments on untreated, trimethylaluminum-treated, hydrogen-plasma treated, and iterative hydrogen plasma/trimethylaluminum-treated samples are compared in the context of interface trap density, $D_{\text{it}}$. Through the conductance method, it was found that five cycles of two s, 20 mT, 100 W hydrogen plasma alternating with 40 msS of trimethylaluminum dose prior to dielectric growth resulted in a reduction of interface trap density (0.2 eV below the conduction band edge) from $4.6\times 10^{12}$ eV-1 cm-2 for untreated samples to $1.7\times 10^{12}$ eV-1 cm-2 for treated samples.

• 2011-09-25

著者

• Mitchell William

  Department Of Electrical And Computer Engineering University Of California

• Carter Andrew

  Department Of Electrical And Computer Engineering University Of California

• Law Jeremy

  Department Of Electrical And Computer Engineering University Of California

• RODWELL Mark

  Department of Electrical and Computer Engineering, University of California

• Thibeault Brian

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

スポンサーリンク