Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate
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概要
- 論文の詳細を見る
- 2012-07-25
著者
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Sun Min
Department Of Earth Sciences The University Of Hong Kong
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Sun Min
Department Of Electrical Engineering And Computer Science Massachusetts Institute Of Technology
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Lu Bin
Department Of Electrical Engineering And Computer Science Massachusetts Institute Of Technology
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Lee Hyung-seok
Department Of Electrical Engineering And Computer Science Massachusetts Institute Of Technology
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Palacios Tomas
Department Of Electrical Engineering And Computer Science Massachusetts Institute Of Technology
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PIEDRA Daniel
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
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Piedra Daniel
Department Of Electrical Engineering And Computer Science Massachusetts Institute Of Technology
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Palacios Tomas
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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- Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate