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Department of Electrical and Computer Engineering, Nagoya Institute of Technology | 論文
- First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
- Bandwidth Allocation Considering Priorities among Multimedia Components in Mobile Networks
- A Character-Based Postprocessing System for Handwritten Japanese Address Recognition
- Performance of a Nonblocking Space-Division Packet Switch with Two Kinds of Correlated Input Calls
- A Flash Lamp with Toroidal Discharge Excitation
- Anomalous Saturation Characteristics of Output Powers of Ar^+ Ion Lasers and Influence of Pinch Effects
- Subjective Assessment of Stored Media Synchronization Quality in the VTR Algorithm
- Performance Evaluation of a Dynamic Resolution Control Scheme for Video Traffic in Media-Synchronized Multimedia Communications
- Handwritten Postal Code Recognition by Neural Network : A Comparative Study (Special Issue on Character Recognition and Document Understanding)
- Galvanomagnetic Size Effect in Copper
- Electrical Properties of Hg_Cd_xTe Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy
- Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
- Optoelectronic Integrated Circuits Grown on Si Substrates (Special Issue on Opto-Electronics and LSI)
- A New Type VUV Detector with Plane Electrodes Deposited on a Crystalline Quartz
- First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- A Globalized Trend Towards EMC Technology
- Design Optimization and Performance of a Novel 6-Slot 5-Pole PMFSM with Hybrid Excitation for Hybrid Electric Vehicle
- Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition From Aqueous Solutions
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition