スポンサーリンク
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan | 論文
- Computational Analysis of the Effects of Antineoplastic Agents on Axonal Transport
- Evalution of serodiagnosis of toxoplasmosis by using the recombinant nucleoside triphosphate hydrolase isoforms expressed in Escherichia coli
- Computational Analysis of the Effects of Antineoplastic Agents on Axonal Transport
- Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111)
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films
- Intrathecally administered Sema3A protein attenuates neuropathic pain behavior in rats with chronic constriction injury of the sciatic nerve
- Planar Hall Effect and Magnetic Anisotropy in a Mn δ-doped GaAs/p-AlGaAs Heterostructure
- Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As : Semiconductors
- Intranasal Administration of Semaphorin-3A Alleviates Sneezing and Nasal Rubbing in a Murine Model of Allergic Rhinitis
- Fully Parallel Self-Learning Analog Support Vector Machine Employing Compact Gaussian Generation Circuits (Special Issue : Solid State Devices and Materials (2))
- Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
- Efficient Image-Vector-Generation Processor for Edge-Based Complementary Feature Representations
- Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
- Reduction in Interface Trap Density of Al
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films