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Department of Electrical Engineering Hiroshima University | 論文
- A Functionally Graded Piezoelectric Material Created by an Internal Temperature Gradient : Electrical Properties of Condensed Matter
- In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- 1Pb-21 エネルギー閉じ込めモードの非調和振動を利用した場合の液面レベル・センシング特性(ポスターセッション)
- 圧電定数に傾斜を持つ圧電板を用いた超音波トランスデューサの等価回路解析
- 圧電定数に傾斜を持つ圧電板を用いた超音波トランスデューサの等価回路解析
- 圧電定数に傾斜を持つ圧電板を用いた超音波トランスデューサの等価回路解析
- 圧電定数に傾斜を持つ圧電板を用いた超音波トランスデューサの等価回路解析
- Scanning Tunneling Microscopy Observation of Ar-Ion-Bombarded Si(001) Surfaces and Regrowth Processes by Thermal Annealing
- Optically Detected Far-Infrared Magnetoabsorption in InGaAs
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry