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Department of Electrical Engineering Hiroshima University | 論文
- Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
- Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
- Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Downstream Etching of Si and SiO_2 Employing CF_4/O_2 or NF_3/O_2 at High Temperature : Etching and Deposition Technology
- FOREWORD (Special Issue on Scientific ULSI Manufacturing Technology)
- リニアアレイを用いた無回折型超音波ビームの電子走査に関する検討
- PE10 複合圧電材を用いた面積重み付けコニカル形超音波トランスジューサの特性(ポスターセッション3)
- パルス反射法による重み付けコニカル形トランスジューサの分解能評価
- 複合圧電材重み付けコニカル形トランスジューサの製作と特性
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
- Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
- Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Electrical and Optical Properties of Amorphous Germanium
- Electromigration Characteristics of Cu-Al Precipitate in AlCu Interconnection
- Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field
- High-Rate and Smooth Surface Etching of Al_2O_3TiC Employing Inductively Coupled Plasma (ICP)