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Department of Electrical Engineering Hiroshima University | 論文
- OD2 V溝構造を持つ圧電機能傾斜型広帯域超音波トランスデューサ(バルク波デバイス,口頭発表)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Amorphous Silicon Superlattice Thin Film Transistors
- New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors
- Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure : Semiconductors
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon Surfaces
- Adsorption and Desorption of AlCl_3 on Si(111)7×7 Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy
- Characterization of HF-treated Si(111) Surfaces
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
- A New Inside-Type Segmented Coil Antenna for Uniformity Control in a Large-Area Inductively Coupled Plasma
- Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure