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Department of Electrical Engineering, Osaka University | 論文
- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
- ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
- Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
- Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE)
- Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System
- Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux : Semiconductors
- Slope Nucleation Method for the Growth of High-Quality 4-Dimethylamino-Methyl-4-Stibazolim-Tosylate (DAST) Crystals
- Driving-Voltage Reduction of Electrostatically Tunable Infrared Filter
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Bulk Laser Damage in CsLiB_6O_ Crystal and Its Dependence on Crystal Structure
- Effect of Low-Frequency Vibration Method on Growing Huntite-Borate Crystals