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Department of Electrical Engineering, Osaka University | 論文
- Nonlinear Optical Properties of Cesium Lithium Borate
- Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
- Characterization of InGaAs Phosphidized by a Plasma Process
- Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
- Current Injection Control Scheme of Voltage Sag Compensation by Parallel Type Compensator with Series Inductor
- Standby Mode Operation of Series Type SMES for Voltage Sag Compensation (特集:平成17年〔電気学会〕電力・エネルギー部門大会)
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- The Use of Docosahexaenoic Acid Supplementation to Ameliorate the Hyperactivity of Rat Pups Induced by in utero Ethanol Exposure