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Department of Electrical Engineering, Osaka University | 論文
- Effects of KCl Addition on the K_2CO_3 Flux Growth of Ca_3Co_4O_9 Crystals for a Thermoelectric Device
- 90°Phase-Matching Properties of YCa_4O(BO_3)_3 and Gd_x Y_Ca_4O(BO_3)_3
- Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
- Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
- Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
- Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
- Auger and X-Ray Analyses of Iron-Oxide-Coated Si Photoelectrodes
- Chalcogenide Amorphous Semiconductor Diodes
- Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
- Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
- High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
- Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
- Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
- Photodoping of Ag into Single Crystal As_2S_3
- Dependence of RF Power on the Content and Configuration of Hydrogen in Amorphous Hydrogenated Silicon by Reactive Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after Fabrication