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Department of Electrical Engineering, Faculty of Engineering, Osaka University | 論文
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
- Bistability of Electro-Optic Effects in Ferroelectric Liquid Crystals : L: Liquid Crystals
- Effect of Low-Frequency Vibration Method on Growing Huntite-Borate Crystals
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
- K Emission Spectra of Nontransition Elements Dissolved in Noble or Transition Metals : X-RAY EMISSION SPECTROSCOPY
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors