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Department of Electrical Engineering, Faculty of Engineering, Osaka University | 論文
- Photodoping of Ag into Single Crystal As_2S_3
- Dependence of RF Power on the Content and Configuration of Hydrogen in Amorphous Hydrogenated Silicon by Reactive Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after Fabrication
- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
- ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
- Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
- Heteroepitaxial Growth of Tungsten Carbide Films on W (110) by Plasma-Enhanced Chemical Vapor Deposition
- Electron-Beam-Induced Conduction in Polystyrene
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H