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Department of Electrical Engineering, Faculty of Engineering, Osaka University | 論文
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
- Room Temperature Q-Switched Liquid Laser (SeOCl_2-Nd^)
- Resonant Scattering of Dye Laser Light from Atomic Sodium
- Wavelength Shift of Dye Solution Laser
- Mass Spectroscopy of Vaporized (SN)_x Polymer
- Precursor Observed in a Pressure Driven Shock Wave
- The Ionizational Relaxation behind Shock Front in Argon
- The Ionizational Relaxation behind Shock Front in Argon
- Detailed Study of Si-H Stretching Modes in μc-Si: H Film through Second Derivative IR Spectra
- Actuator Using Electrostriction Effect of Fullerenol-Doped Polyurethane Elastomer (PUE) Films(Nano-interface Controlled Electronic Devices)(Recent Progress of Organic Molecular Electronics)
- Electronic Conduction in Polyethylene Induced by Pulsed Electron Beam
- Simultaneous Observation of the Thermally Stimulated Current and the Thermoluminescence in Polyethylene
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Double-layered lateral meniscus
- Optical Damage in LiNbO_3 Inducedby X-ray Irradiation
- Electron Hall Mobility in Reduced LiNbO_3
- Temperature Dependence of Raman Scattering of LiNbO_3