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Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences | 論文
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Overdense Plasma Production Using Electron Cyclotron Waves
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
- Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
- A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation
- Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
- Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)