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Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University | 論文
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
- 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
- Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
- InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
- Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
- Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
- Ultraviolet Random Laser Action of Nano-structured Zinc Oxide
- Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
- Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
- Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
- Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface