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Department Of Electrophysics National Chiao Tung University | 論文
- Growth Temperature Reduction for Isoelectronic As-Doped GaN
- Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
- Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- A Novel Shallow Trench Isolation Technique
- A Novel Shallow Trench Isolation Technique
- Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
- A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
- Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
- Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
- Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
- Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
- Voltage and Frequency Dependence of Differential Capacitance in Relaxed In_Ga_As/GaAs Schottky Diodes
- Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n^+-p Structures
- Capacitance Dispersion in n-LT-i-p GaAs Structures with the Low-Temperature Layers Grown at Different Temperatures
- Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
- Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
- Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
- Ga_In_P Barrier Layer for Wet Oxidation of AIAs
- Infrared Spectroscopic Study of Mercury-Sensitized Photo-CVD Silicon Oxide