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Department Of Electronics Engineering National Chiao Tung University | 論文
- An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
- A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Growth of Epitaxial-Like (Sr_Ba_)Nb_2O_6 Ferroelectric Films
- Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
- Characterization of RF LDMOS Transistors with Different Layout Structures
- Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
- Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
- Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
- The Education and Research of Analog VLSI in Taiwan
- The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon
- Modeling Geometry-Dependent Floating-Body Effect Using Body-Source Built-In Potential Lowering for SOI Circuit Simulation
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
- TiWN Schottky Contacts to n-Ga_In_P
- Preparation and Electrornic Properties of YBa_2Cu_3O_x Films with Controlled Oxygen Stoichiometries
- The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
- An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications