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Department Of Electronic Engineering Feng Chia University | 論文
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Ray Tracing in an Inhomogeneous Liquid Crystal Cell
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
- A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
- Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
- Novel Vacuum Encapsulation Applied for Improving Short-Channel Immunity on Poly-Si Thin Film Transistors
- Fabrication of the Sponge-like Layered Silver(I)-Alkylamine Complexes and Their in situ Reduction
- Fabrication of Hollow Zeolite Fibers through Layer-by-Layer Adsorption Method
- Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In_Ga_As/GaAs/In_Ga_As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer
- Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
- IS-82 Mutation at nucleotide 1108 of the Fibroblast growth factor receptor 3 (FGFR3) in a case of thanatophoric dysplasia type I (TD1)
- Improving Electrical Characteristics of High-k NiTiO Dielectric with Nitrogen Ion Implantation