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Department Of Electronic Engineering Faculty Of Engineering Tohoku University | 論文
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
- Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Add-On Effect of Bedtime Dosing of the α_1-Adrenergic Receptor Antagonist Doxazosin on Morning Hypertension and Left Ventricular Hypertrophy in Patients Undergoing Long-Term Amlodipine Monotherapy
- Morning Rise of Blood Pressure Assessed by Home Blood Pressure Monitoring Is Associated with Left Ventricular Hypertrophy in Hypertensive Patients Receiving Long-Term Antihypertensive Medication
- Morning Rise in Blood Pressure Is a Predictor of Left Ventricular Hypertrophy in Treated Hypertensive Patients
- Effects of Antihypertensive Treatment on Platelet Function in Essential Hypertension
- Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric