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Department Of Electronic Engineering Cheng Shiu University | 論文
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Self-Organized InGaN Nanodots Grown by Metal-Organic Chemical Vapor Deposition System
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
- Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
- High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
- Reducing flow induced building vibration by streamlining
- The wind features of Taipei 101 Financial Building
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- High-Efficiency Electrophosphorescence Red Organic Light-Emitting Diodes Using a Thin 1,3-Bis[2-(2,2$'$-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene Cleaving Layer in an Ir-Complex-Doped Emitter Layer
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- The novel method to improve electrical characteristics of p-type GaN by using Ni catalysis
- Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures
- High Brightness Green Light Emitting Diode with Charge Asymmetric Resonance Tunneling Structure
- GaN-Based Metal--Semiconductor--Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer
- Quaternary AlInGaN Solar Blind UV Detectors with Photo-CVD SiO_2 Cap Layers
- Organic Light-Emitting Diodes with Carrier Balance Structures
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors