スポンサーリンク
Department Of Electronic Engineering Chang Gung University | 論文
- Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress
- Mechanical Strain Promotes Fibroblast Gene Expression in Presence of Corticosteroid
- Metastatic Carcinoma of the Breast : A Case with the Unusual Presentation of Unilateral Periorbital Edema
- High-$k$ HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
- Paroxysmal Dyskinesia with Secondary Generalization of Tonic-clonic Seizures in Pseudohypoparathyroidism
- Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
- Diffusion of Indium Implanted in Silicon Oxides
- Chemical Sensing Properties of Electrolyte/SiGe/SiO2/Si Structure
- Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory
- Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
- pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte--Insulator--Semiconductor Sensor with Rapid Thermal Annealing
- Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment
- Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
- Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon
- Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film
- Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNz Metal Gate Electrodes
- Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
- Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure