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Department Of Electrical And Electronic Engineering Yamaguchi University | 論文
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Silicidation Reaction and Stress in Ti/Si
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Application of Nondiffracting Laser Beam to Laser Compton Scattering
- ENDOSCOPIC TREATMENT FOR BENIGN BILIARY STRICTURES : CAN PLACEMENT OF A COVERED METALLIC STENT BE AN OPTION IN REFRACTORY CASES ?
- Indications for endoscopic papillary balloon dilation for common bile duct stones for the prevention of pancreatitis and the preservation of papillary function after the procedure
- DIAGNOSTIC VALUE OF TRANSPAPILLARY BIOPSY USING DOUBLE LUMEN INTRODUCER FOR DETERMINATION OF MUCOSAL EXTENT IN EXTRAHEPATIC BILE DUCT CANCER
- EUS-GUIDED PANCREATIC PSEUDOCYST DRAINAGE
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy