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Central Research Laboratory Hitachi | 論文
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)
- Interaction of antiproliferative protein Tob with the CCR4-NOT deadenylase complex
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- 3P-307 4CCDを用いた4色単分子同時蛍光計測システムの開発(計測,第46回日本生物物理学会年会)
- Uniform Ultra-Thin Pb(Zr, Ti)O_3 Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- 2P333 広波長域分光2分割イメージング法を用いた簡便かつ安価な4色単分子同時計測システムの開発(バイオイメージング,第48回日本生物物理学会年会)
- Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films