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Central Research Laboratory, HITACHI, Ltd. | 論文
- A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- DC Gas-Discharge Display Panel with LaB_6 Thin-Film Cathode
- Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
- Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Low-Temperature Electrical Characteristics of Strained-Si-MOSFETs
- Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
- Control of Aperture Size of Optical Probes for Scanning Near-Field OpticalMicroscopy Using Focused Ion Beam Technology
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- High-Reliability Programming Method Suitable for Flash Memories of More Than 256Mb