スポンサーリンク
Central Research Laboratories, Sharp Corporation | 論文
- Novel Switching with Gray Scale in Surface-Stabilized Ferroelectric Liquid Crystal Devices
- Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Photoluminescence Study of GaAs Grown Directly on Si Substrates
- High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers
- High-Power CW Operation in V-Channeled Substrate Inner-Stripe Lasers with "Torch"-Shaped Waveguide : Waves, Optics and Quantum Electronics
- Stable Single-Longitudinal-Mode Operation over Wide Temperature Range on Semiconductor Lasers with a Short External Cavity
- Some Optical Properties of CuCl Single Crystals
- Vapor Growth of AN-Doped ZnTe by the Closed-Tube Method
- Analysis of Substrate Effect in Chemically Amplified Resist on Silicate-Glass
- Electron Spin Resonance Study of Boron Doped a-SiN_x:H(x=0.07)
- GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
- Temperature Dependence of Photoluminescence Properties in (111)- and (100)-Oriented GaAs/AlGaAs Quantum Well Structures : Surface, Interfaces and Films
- Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter
- The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film
- Phased-Array with the "YY" Shaped Symmetrically Branching Waveguide (SBW)
- Multimode-Oscillating Behavior in Index-Guiding V-Channeled Substrate Inner Stripe Lasers Depending on Structural Factor
- Formation of Sources/Drains Using Self-Activation Technique on Polysilicon Thin Film Transistors
- Fabrication of Self-Aligned Aluminum Gate Polysilicon Thin-Film Transistors Using Low-Temperature Crystallization Process