Photoluminescence Study of GaAs Grown Directly on Si Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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Sakurai Takeshi
Central Research Laboratories Charp Corporation
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Enatsu M
Central Research Laboratories Sharp Corporation
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Enatsu Masao
Central Research Laboratories Sharp Corporation
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Sakurai Takeshi
Central Research Laboratories Sharp Corporation
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SHIMIZU Masafumi
Central Research Laboratories, Sharp Corporation
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MIZUKI Toshio
Central Research Laboratories, Sharp Corporation
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SUGAWARA Kazushi
Central Research Laboratories, Sharp Corporation
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Mizuki Toshio
Central Research Laboratories Sharp Corporation
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Sugawara Kazushi
Central Research Laboratories Sharp Corporation
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Shimizu Masafumi
Central Research Laboratories Sharp Corporation
関連論文
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- Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
- Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
- Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
- Calculations of Molecular Beam Flux from Liquid Source
- Photoluminescence Study of GaAs Grown Directly on Si Substrates
- Critical Behavior of Electrical Resistivity of Y_1Ba_2Cu_3O_ in the Vicinity of Structural Phase Transition Temperature : Electrical Properties of Condensed Matter
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