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Base Technology Research Center, Seiko Epson Corporation | 論文
- Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
- Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
- Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Relationship between Lattice Deformation and Polarization in BaTiO_3
- Electronic States of Perovskite-Type Oxides and Ferroelectricity
- Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
- Current Paths over Grain Boundaries in Polycrystalline Silicon Films : Semiconductors
- Selective Deposition of Electroless Plating Films Using the Difference between the Functional Groups of Self-Assembled Monolayers
- Device Simulation of grain Boundaries with Oxide-Silicon Interface Roughness in Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors
- 24.4:Investigation of Hot Carrier Degradation Due to AC Stress in Low Temperature Poly-Si TFTs(発表概要)(Report on 2000 SID International Symposium)
- Pseudo-Lattice Method for Dynamic 3-D Liquid-Crystal Director Simulation
- 36.2:Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing(SUFTLA^)(2.内容)(2-1.セッション36:AM-OLEDs and Low-Temperature Polysilicon Technologies)(Society for Information Display 00 Report)