36.2:Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing(SUFTLA^<TM>)(2.内容)(2-1.セッション36:AM-OLEDs and Low-Temperature Polysilicon Technologies)(Society for Information Display 00 Report)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人映像情報メディア学会の論文
- 2000-07-10
著者
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Inoue S.
Base Technology Research Center
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Shimoda T.
Base Technology Research Center
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Shimoda T.
Seiko Epson Corporation
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Utsunomiya S.
Base Technology Research Center, SEIKO EPSON Corporation
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Utsunomiya S.
SEIKO EPSON Corporation
関連論文
- Plasma Oxidation of Silicon and Its Application to Poly-Si TFT Fabrication Process (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- Plasma Oxidation of Silicon and its Application to Poly-Si TFT Fabrication Process
- 36.2:Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing(SUFTLA^)(2.内容)(2-1.セッション36:AM-OLEDs and Low-Temperature Polysilicon Technologies)(Society for Information Display 00 Report)
- [36.2]Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing(SUFTLA^)(【興味深かった発表】)(Society for Information Display 2000 Report)