スポンサーリンク
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan | 論文
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
- Analyses of High Frequency Capacitance-Voltage Characteristics of Metal-Ferroelectrics-Insulator-Silicon Structure
- Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
- An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
- An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition
- Low-Temperature Preparation of Ferroelectric Sr_2(Ta_, Nbx)_2O_7 Thin Films by Pulsed Laser Deposition and Their Application to MFIS Structure
- Low-Temperature Preparation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric- Insulator-Semiconductor-FET
- A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Contactless Characterization of Fixed Charges in HfO2 Thin Film from Photoreflectance
- A Low Temperature Preparation of BaTiO3 Thin Film by Sol-Gel-Hydrothermal Treatment below 210°C