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Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol | 論文
- Plasma-enhanced polymerization thin films as a drift barrier for Cu interconnects
- Mechanical Strength of Multilayered Dielectric Structures Measured by Laser-Pulse Generated Surface-Acoustic-Wave Technique
- Mechanical Property Determination of Thin Porous Low-k Films by Twin-Transducer Laser Generated Surface Acoustic Waves
- Theoretical Analysis of Elastic Modulus and Dielectric Constant for Low-k Two-Dimensional Periodic Porous Silica Films
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Effect of Phosphorus Atom in Self-Assembled Monolayer as a Drift Barrier for Advanced Copper Interconnects
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer