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Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company | 論文
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Silicidation Reaction and Stress in Ti/Si
- Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Effect of Composition on the Stability of Liposomal Irinotecan Prepared by a pH Gradient Method
- Structure and Electrical Properties of Thin Ta_2O_5 Deposited on Metal Electrodes
- Properties of Highly Oriented Ta_2O_5 on Metal Electrodes
- Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO_2 High-k Gate Stacks
- Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks