Omura Yasuhisa | ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
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概要
- Omura Yasuhisaの詳細を見る
- 同名の論文著者
- ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japanの論文著者
関連著者
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Omura Yasuhisa
ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
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Omura Yasuhisa
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Omura Yasuhisa
Ordist Dept. Electronics Kansai University
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Sato Shingo
Graduate School Of Engineering Hokkaido University
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Omura Yasuhisa
Ordist:graduate School Japan Of Engineering2 Kansai University
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Omura Yasuhisa
Ordist Grad. School Of Sci. & Eng. Kansai University
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Iida Yukio
Ordist Dept. Electronics Kansai University
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TAMURA Takuta
ORDIST Dept. Electronics, Kansai University
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NAMURA Shigeo
ORDIST Dept. Electronics, Kansai University
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Yamamura Tsuyoshi
Graduate School Of Sci. & Eng Kansai University
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Yoshimoto Kazuhisa
Graduate School Japan Of Engineering2 Kansai University
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Tamura Takuta
Ordist Dept. Electronics Kansai University
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Namura Shigeo
Ordist Dept. Electronics Kansai University:(present Office)glory Corp
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Yoshioka Yoshimasa
Ordist Grad. School Of Sci. & Eng. Kansai University
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AZUMA Yu
ORDIST, Grad. School of Sci. & Eng., Kansai University
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Azuma Yu
Ordist Grad. School Of Sci. & Eng. Kansai University
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Sato Shingo
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Sato Shingo
Graduate School of Science and Technology, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Yamamura Tsuyoshi
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Omura Yasuhisa
ORDIST, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Yamamura Tsuyoshi
Graduate School of Science and Technology, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Shunsuke Nakano
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Hayashi Osanori
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Nakano Shunsuke
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Osanori Hayashi
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
著作論文
- Impact of Dot-Size and Dot-Location Variations on Capacitance--Voltage Characteristics and Flat-Band Voltage Shift of Quantum-Dot Non-Volatile Memory Cells
- Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
- Design Feasibility and Prospect of High-Performance Sub-50-nm-Channel Silicon-on-Insulator Single-Gate SOI MOSFET(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition)
- Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels
- Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations
- Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface
- Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor