Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

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概要

• 論文の詳細を見る

• The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode (SBD) in the Schenkel circuit is examined by experiments and simulations. Unlike the SBD, the reverse-biased current of the SOI-MOSFET-based quasi-diode is much lower than its forward-biased current (I_F). The driving current of the quasi-diode (I_F) is increased by the excellent subthreshold swing value (S) of the SOI MOSFET ; the trade-off between boost-up efficiency (η) and I_F should be taken into account. An a. c. analysis indicates that the channel-doping level of the quasi-diode should be optimized to suppress the floating-body effect for RF applications.

• 関西大学の論文

著者

• Omura Yasuhisa

  Ordist Dept. Electronics Kansai University

• Iida Yukio

  Ordist Dept. Electronics Kansai University

• TAMURA Takuta

  ORDIST Dept. Electronics, Kansai University

• NAMURA Shigeo

  ORDIST Dept. Electronics, Kansai University

• Tamura Takuta

  Ordist Dept. Electronics Kansai University

• Namura Shigeo

  Ordist Dept. Electronics Kansai University:(present Office)glory Corp

• Omura Yasuhisa

  ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

• Omura Yasuhisa

  ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan

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• Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
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• Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface
• Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
• Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits

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