Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Omura Yasuhisa
Ordist Dept. Electronics Kansai University
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Omura Yasuhisa
Ordist Grad. School Of Sci. & Eng. Kansai University
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Yoshioka Yoshimasa
Ordist Grad. School Of Sci. & Eng. Kansai University
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AZUMA Yu
ORDIST, Grad. School of Sci. & Eng., Kansai University
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Azuma Yu
Ordist Grad. School Of Sci. & Eng. Kansai University
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Omura Yasuhisa
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Omura Yasuhisa
ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
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- Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
- Design Feasibility and Prospect of High-Performance Sub-50-nm-Channel Silicon-on-Insulator Single-Gate SOI MOSFET(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition)
- Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels
- Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations
- Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface
- Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
- Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits