Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
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概要
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In this paper, we study the impact of a local high-$k$ gate insulator on the drivability and off-current of a gate-all-around (GAA) silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET). The replacement of part of the gate SiO2 film with a thick high-$k$ insulator (for example, HfO2) results in the high drivability of the GAA MOSFET, which stems from the lateral extension of high gate-induced potential. A simulation was performed to determine the optimal width of the high-$k$ insulator in order to realize the best performance. In addition, simulation results reveal that the parasitic resistance of the low-doped source and drain diffusion region is markedly reduced by the lateral extension of gate-induced potential because the crosssection of the silicon wire is very small.
- 2010-04-25
著者
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Omura Yasuhisa
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Shunsuke Nakano
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Hayashi Osanori
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Nakano Shunsuke
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Osanori Hayashi
ORDIST and Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Omura Yasuhisa
ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
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- Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
- Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits