Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits

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概要

• 論文の詳細を見る

• In this paper, we introduce important aspects of the cross-current tetrode (XCT) silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET) and we propose its application to practical low-power multiple-voltage-reference supplier circuits. Important functions of the proposed circuits are simulated on the basis of measured device characteristics.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Omura Yasuhisa

  ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

• Omura Yasuhisa

  ORDIST and Graduate School of Science and Engineering, Kansai University, Suita, Osaka 564-8680, Japan

関連論文

• Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
• Design Feasibility and Prospect of High-Performance Sub-50-nm-Channel Silicon-on-Insulator Single-Gate SOI MOSFET(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition)
• Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels
• Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations
• Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface
• Impact of Local High-$k$ Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
• Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits

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