Omura Yasuhisa | ORDIST, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

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概要

関連著者

Sato Shingo
Graduate School Of Engineering Hokkaido University
Omura Yasuhisa
Ordist Dept. Electronics Kansai University
Yamamura Tsuyoshi
Graduate School Of Sci. & Eng Kansai University
Sato Shingo
Graduate School of Science and Technology, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Omura Yasuhisa
ORDIST and Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Omura Yasuhisa
ORDIST, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Yamamura Tsuyoshi
Graduate School of Science and Technology, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Omura Yasuhisa
ORDIST and Graduate School of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan

著作論文

Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels

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