Suzuki Toshikazu | Corporate Slsi Development Div. Semiconductor Company Matsushita Electric Industrial Co. Ltd.

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著作論文

0.3-1.5V Embedded SRAM Core with Write-Replica Circuit Using Asymmetrical Memory Cell and Source-Level-Adjusted Direct-Sense-Amplifier(Memory, Low-Power LSI and Low-Power IP)
High-Speed Circuit Techniques for Battery-Operated 16 Mbit CMOS DRAM (Special Section on High Speed and High Density Multi Functional LSI Memories)
A 1R/1W SRAM Cell Design to Keep Cell Current and Area Saving against Simultaneous Read/Write Disturbed Accesses(Memory,Low-Power, High-Speed LSIs and Related Technologies)
A Differential Cell Terminal Biasing Scheme Enabling a Stable Write Operation against a Large Random Threshold Voltage (V_) Variation(Novel Device Architectures and System Integration Technologies)
A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme

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