Yamagami Yoshinobu | Corporate Slsi Development Div. Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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概要
- YAMAGAMI Yoshinobuの詳細を見る
- 同名の論文著者
- Corporate Slsi Development Div. Semiconductor Company Matsushita Electric Industrial Co. Ltd.の論文著者
関連著者
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YAMAUCHI Hiroyuki
Faculty of Information Engineering, Fukuoka Institute of Technology
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Suzuki Toshikazu
Corporate Slsi Development Div. Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yamauchi Hiroyuki
Faculty Of Information Engineering Dept. Of Computer Science And Engineering Fukuoka Institute Of Te
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Yamauchi H
Faculty Of Information Engineering Fukuoka Institute Of Technology
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YAMAGAMI Yoshinobu
Corporate SLSI Development Div., Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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Yamagami Yoshinobu
Corporate Slsi Development Div. Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Suzuki Toshikazu
Semiconductor Technology Academic Research Center (starc)
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YAMAUCHI Hiroyuki
Matsushita Electric Industrial Co., Ltd.
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SUZUKI Toshikazu
Matsushita Electric Industrial Co., Ltd.
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YAMAGAMI Yoshinobu
Matsushita Electric Industrial Co., Ltd.
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HATANAKA Ichiro
Matsushita Electric Industrial Co., Ltd.
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SHIBAYAMA Akinori
Matsushita Electric Industrial Co., Ltd.
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AKAMATSU Hironori
Matsushita Electric Industrial Co., Ltd.
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Shibayama Akinori
Matsushita Electric Industrial Co. Ltd.
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Hatanaka Ichiro
Matsushita Electric Industrial Co. Ltd.
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Akamatsu Hironori
Corporate Semiconductor Development Division Matsushita Electric Industrial Co. Ltd.
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Akamatsu Hironori
Semiconductor Research Center Sl24 Matsushita Electric Industrial Co. Ltd.
著作論文
- 0.3-1.5V Embedded SRAM Core with Write-Replica Circuit Using Asymmetrical Memory Cell and Source-Level-Adjusted Direct-Sense-Amplifier(Memory, Low-Power LSI and Low-Power IP)
- A 1R/1W SRAM Cell Design to Keep Cell Current and Area Saving against Simultaneous Read/Write Disturbed Accesses(Memory,Low-Power, High-Speed LSIs and Related Technologies)
- A Differential Cell Terminal Biasing Scheme Enabling a Stable Write Operation against a Large Random Threshold Voltage (V_) Variation(Novel Device Architectures and System Integration Technologies)