Lee Jong-Ho | Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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概要
- 同名の論文著者
- Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sciの論文著者
関連著者
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Lee Jong-Ho
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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LEE Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Lee Gil
Inter-university Semiconductor Research Center Seoul National University:school Of Electrical Engine
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Yun Jang-Gn
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Kim Yoon
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Lee Jong-Ho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung‐gook
School Of Electrical Engineering Seoul National University
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Lee J
School Of Electrical Engineering Seoul National University
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Kim Yoon
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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Lee J
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Yun Jang‐gn
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Kim Yoon
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Yun Jang-gn
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Kim Yoon
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Lee Gil
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-gook
School Of Electrical Engineering Seoul National University
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Park Byung‐gook
Seoul National Univ. Seoul Kor
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Kim Doo-Hyun
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Partk Se
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Lee Gil
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Lee Joung-eob
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Lee Jong
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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Yun Jang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Park Byung-gook
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Lee Jong
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Lee Jong
Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni
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Kim Yoon
School Of Electrical Engineering Seoul National University
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Yur Jang-gn
School Of Electrical Engineering Seoul National University
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Park Byung-gook
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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Park Se
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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Kim Doo‐hyun
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Kim Doo-Hyun
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Shin Hyungcheol
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Kim Heesang
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Oh Byoungchan
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Kim Kyungdo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Cha Seon-Yong
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Jeong Jae-Goan
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Hong Sung-Joo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Cha Seon-Yong
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Yun Jang-Gn
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Lee Jong-Ho
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Lee Jong-Ho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Hong Sung-Joo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Lee Gil
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Park Byung-Gook
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Jeong Jae-Goan
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Partk Se
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Lee Jung
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
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Kim Yoon
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University
著作論文
- A new cone-type 1T DRAM cell (Electron devices)
- Independent Gate Twin-bit SONOS flash memory with split-gate effect (Silicon devices and materials)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor