Cha Seon-Yong | R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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概要
- 同名の論文著者
- R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Koreaの論文著者
関連著者
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Cha Seon-Yong
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Lee Jong-Ho
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Chung In-young
Department Of Electronic Engineering Gyeongsang National University
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Jeong Seong
Department Of Chemical Engineering Sungkyunkwan University
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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CHUNG In-Young
Department of Electronics and Communications Engineering, Kwangwoon University
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SEO Sung
School of Electrical Engineering, Seoul National University
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Shin Hyungcheol
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Kim Heesang
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Oh Byoungchan
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Kim Kyungdo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Jeong Jae-Goan
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Hong Sung-Joo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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CHA Seon-Yong
R&D Division, Hynix Semiconductor Inc.
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Cha Seon-Yong
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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LEE Myungjin
R&D Division, Hynix Semiconductor Inc.
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JANG Taesu
R&D Division, Hynix Semiconductor Inc.
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Jeong Seong
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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Lee Jong-Ho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lee Jong-Ho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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PARK Young
School of Electrical Engineering, Seoul National University
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Hong Sung-Joo
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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JANG Taesu
R&D Division, Hynix Semiconductor Inc.
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JEONG Seong
Department of Electronics and Communications Engineering, Kwangwoon University
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Jeong Jae-Goan
R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon, Kyoungki-do 467-701, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
著作論文
- Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
- New Multiple-Times Programmable CMOS ROM Cell